Novel Coupling Cavities for Improving the Performance of G-Band Ladder-Type Multigap Extended Interaction Klystrons

被引：16

作者：

Li, Shasha ^{[1
]}

Ruan, Cunjun ^{[1
,2
]}

Fahad, Ayesha Kosar ^{[1
]}

Wang, Pengpeng ^{[1
]}

Zhang, Zheng ^{[1
]}

He, Wenlong ^{[3
]}

机构：

[1] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

[2] Beihang Univ, Beijing Key Lab Microwave Sensing & Secur Applica, Beijing 100191, Peoples R China

[3] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518061, Peoples R China

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2020年 / 48卷 / 05期

基金：

美国国家科学基金会;

关键词：

Extended interaction klystron (EIK); G-band; high output power; multigap ladder-type; narrow width coupling cavity; SIMULATION;

D O I：

10.1109/TPS.2020.2982957

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A pair of ladder-type multigap cavities, namely, wide-coupling cavity and narrow-coupling cavity, were comparatively studied to improve the performance of $G$ -band extended interaction klystrons (EIKs). It is found that the narrow-coupling cavity has higher effective characteristic impedance and stronger electric field distribution which lead to relatively stronger beam-wave interaction strength and obviously better output characteristics. Particle-in-cell (PIC) simulation confirmed this conclusion. Under an working voltage of 16.5 kV, current of 0.3 A, and operating mode of $\pi $ mode, the narrow-coupling cavity structure has greater output power and wider bandwidth. Specifically, when the ratio of long and short slots is 1.13, 1.21, and 1.26, compared with the wide coupling cavity structure, the output power of the narrow coupling cavity structure is increased by 40, 90, and 50 W, and the bandwidth is significantly increased by 50, 100, and 200 MHz, respectively. Then a maximum output power of 400 W, a gain of 39 dB, a bandwidth of 500 MHz can be achieved with our narrow-coupling cavity structure EIK in $G$ -band. Thus, such structures show potential performance improvement of millimeter-wave and terahertz EIK.

引用

页码：1350 / 1356

页数：7

共 20 条

[1]

[Anonymous], [No title captured]

[2]

[Anonymous], [No title captured]

[3]

[Anonymous], Ps

[4]

[Anonymous], [No title captured]

[5] Vacuum Electronic High Power Terahertz Sources [J].

Booske, John H. ;

Dobbs, Richard J. ;

Joye, Colin D. ;

Kory, Carol L. ;

Neil, George R. ;

Park, Gun-Sik ;

Park, Jaehun ;

Temkin, Richard J. .

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2011, 1 (01) :54-75

[6] Particle-in-Cell Simulation and Optimization of Multigap Extended Output Cavity for a W-Band Sheet-Beam EIK [J].

Chen, Shuyuan ;

Ruan, Cunjun ;

Yong, Wang ;

Zhang, Changqing ;

Zhao, Ding ;

Yang, Xiudong ;

Wang, Shuzhong .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 2014, 42 (01) :91-98

[7]

Chen X., 2009, P 2 IEEE INT C BROAD, P18, DOI [10.1109/ICBNMT.2009.5347808, DOI 10.1109/ICBNMT.2009.5347808]

[8] AN EXTENDED-INTERACTION KLYSTRON - EFFICIENCY AND BANDWIDTH [J].

CHODOROW, M ;

KULKE, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :439-&

[9] PPM focused Ku band pulsed EIK [J].

Durand, Alain J. .

2006 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE HELD JOINTLY WITH 2006 IEEE INTERNATIONAL VACUUM ELECTRON SOURCES, 2006, :73-74

[10] 120-GHz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signals [J].

Hirata, A ;

Harada, M ;

Nagatsuma, T .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2003, 21 (10) :2145-2153

← 1 2 →