ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

被引：3

作者：

Rusu, I. I. ^{[2
]}

Smirnov, M. ^{[1
]}

Rusu, G. G. ^{[1
]}

Rambu, A. P. ^{[1
]}

Rusu, G. I. ^{[1
]}

机构：

[1] Al I Cuza Uiv, Fac Phys, Iasi 700506, Romania

[2] Univ Bacau, Bacau 600115, Romania

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2010年 / 24卷 / 31期

关键词：

Zinc oxide; thin films; electronic transport; absorption spectra; ZINC-OXIDE; OPTICAL CHARACTERISTICS; GRAIN-BOUNDARIES; RESISTIVITY; CONDUCTION;

D O I：

10.1142/S0217979210057602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc oxide (ZnO) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (E-g0 = 3.28 - 3.37 eV) was determined from absorption spectra.

引用

页码：6079 / 6090

页数：12

共 50 条

[1]

[Anonymous], 1978, Elements of X-Ray Diffraction

[2] On the structural and optical characteristics of CdSe thin films [J].