Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

被引：54

作者：

Liu, Shou-En ^{[1
,2
]}

Yu, Ming-Jiue ^{[1
]}

Lin, Chang-Yu ^{[1
]}

Ho, Geng-Tai ^{[1
]}

Cheng, Chun-Cheng ^{[1
]}

Lai, Chih-Ming ^{[1
]}

Lin, Chrong-Jung ^{[2
]}

King, Ya-Chin ^{[2
]}

Yeh, Yung-Hui ^{[1
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Semicond Technol Applicat Res Grp, Microelect Lab, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

Amorphous InGaZnO; passivation layer; thin-film transistor; STRESS;

D O I：

10.1109/LED.2010.2091620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (V-T) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm(2)/V.s, a threshold voltage of 2.86 V, and an on-off ratio of 10(8).

引用

页码：161 / 163

页数：3

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