Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

被引：115
作者：
Liu, HY
Steer, MJ
Badcock, TJ
Mowbray, DJ
Skolnick, MS
Navaretti, P
Groom, KM
Hopkinson, M
Hogg, RA
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 14期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.1897850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to similar to 1.43 mu m. For Sb compositions above 14%, the system becomes Type II, with a decrease of the photoluminescence (PL) efficiency. At a composition of 14%, the room-temperature PL efficiency is maximized, and is also significantly enhanced when compared to that of conventional InGaAs-capped InAs QDs grown under the same conditions. Room-temperature ground-state lasing at 1.292 mu m is demonstrated for an InAs/GaAsSb/GaAs structure. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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