Multicolored ZnO nanowire architectures on trenched silicon substrates

被引:13
作者
Gao, Pu-Xian
Lee, J. L.
Wang, Zhong L. [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Sandia Natl Labs, Livermore, CA 94551 USA
[3] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[4] Univ Connecticut, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
关键词
D O I
10.1021/jp074465o
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Well-tailored three-dimensional (3D) ZnO nanowire architectures have been successfully grown on Si microtrenches fabricated using nanoimprinting lithography by a low-temperature hydrothermal approach. Au nanoparticles or ZnO nanofilms were used as templates to tailor the orientation ordered nanowire growth normal to the microtrench surface. Au produced sparse nanowire growth, while ZnO seeds created densely packed growth. Optically, other than displaying a primary color when viewed from one incident. angle, the 3D nanowire architecture periodically displayed multiple primary color domains covering all microtrenches and the local orientation ordered nanowire arrays. A pre-growth annealing of ZnO nanoseeds resulted in nonuniformity and non-periodic distribution of the grown nanoarchitectures and thus reduced the multicolor effect.
引用
收藏
页码:13763 / 13769
页数:7
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