ANALYSIS OF A NEW IMPLICIT SOLVER FOR A SEMICONDUCTOR MODEL

被引:4
作者
DeCaria, Victor P. [1 ]
Hauck, Cory D. [1 ,2 ]
Laiu, Ming Tse P. [1 ]
机构
[1] Oak Ridge Natl Lab, Comp Sci & Math Div, Multiscale Methods Grp, POB 2009, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Math, Knoxville, TN 37996 USA
关键词
Boltzmann-Poisson equations; semiconductor; drift-diffusion limit; implicit time integration; synthetic acceleration; domain decomposition; ANDERSON ACCELERATION; BOLTZMANN-EQUATION; POISSON SYSTEM; RUNGE-KUTTA; TRANSPORT; ORDER; CONVERGENCE; SCHEMES;
D O I
10.1137/20M1365922
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
We present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann-Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov-Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann-Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, against a recently developed nested iterative solver.
引用
收藏
页码:B733 / B758
页数:26
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