A first principle study of band structure of III-nitride compounds

被引:53
作者
Ahmed, R [1 ]
Akbarzadeh, H
Fazel-e-Aleem
机构
[1] Univ Punjab, Ctr High Energy Phys, Lahore 54590, Pakistan
[2] Isfahan Univ Technol, Dept Phys, Esfahan 841546, Iran
关键词
semiconductors; III-V compounds; III-nitrides; bandgap; WIEN2k; FPLAPW;
D O I
10.1016/j.physb.2005.08.044
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 60
页数:9
相关论文
共 41 条
  • [1] Adachi S, 2005, WILEY SER MATER ELEC, P1, DOI 10.1002/0470090340
  • [2] [Anonymous], 1986, CRYSTAL STRUCTURES
  • [3] ARMENTA MGM, 2000, PHYS REV B, V15, P62
  • [4] Piezoelectric charge densities in AlGaN/GaN HFETs
    Asbeck, PM
    Yu, ET
    Lau, SS
    Sullivan, GJ
    VanHove, J
    Redwing, J
    [J]. ELECTRONICS LETTERS, 1997, 33 (14) : 1230 - 1231
  • [5] Theoretical study of the band-gap anomaly of InN
    Carrier, P
    Wei, SH
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [6] CHO JH, 1996, PHYS REV B, P53
  • [7] Davydov VY, 2002, PHYS STATUS SOLIDI B, V234, P787, DOI 10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO
  • [8] 2-H
  • [9] Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO
  • [10] 2-Z