Numerical simulation of transient and steady-state behavior of heterostructure organic LEDs

被引：0

作者：

Ruhstaller, B ^{[1
]}

Carter, SA ^{[1
]}

Scott, JC ^{[1
]}

Barth, S ^{[1
]}

Riel, H ^{[1
]}

Riess, W ^{[1
]}

机构：

[1] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present self-consistent numerical simulations of multilayer organic light-emitting diodes in both steady-state and pulsed operation that allow for a deeper understanding of charge accumulation, electric field and recombination zone confinement effects due to internal interfaces. Comparison to experimental transient data is given for bilayer LEDs based on Alq(3). The electric field predominantly drops across the Alq(3) layer with the electroluminescence delay time determined by electrons passing through this layer. The recombination zone width is limited by the exciton diffusion length, and the current balance highly sensitive to the cathode injection barrier.

引用

页码：413 / 418

页数：6

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