Tailoring the anomalous Hall effect in the noncollinear antiperovskite Mn3GaN

被引:20
|
作者
Samathrakis, Ilias [1 ]
Zhang, Hongbin [1 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
关键词
BERRY PHASE;
D O I
10.1103/PhysRevB.101.214423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Based on first-principles calculations, we investigated how the intrinsic anomalous Hall conductivity (IAHC) can be tailored in Mn3GaN with a noncollinear magnetic ground state. It is observed that IAHC displays a strong dependence with respect to the in-plane magnetization direction between the Gamma(5)(g) and Gamma(4)(g) magnetic configurations, and it is also susceptible to the biaxial strains, where symmetry plays an essential role. Particularly, we demonstrated that significant enhancement of IAHC can be achieved by tuning the relative positions of Weyl nodes with respect to the Fermi energy, resulting in large anomalous Nernst effect.
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页数:6
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