Improved Photocurrent in Cu(In, Ga)Se2 Solar Cells: From 20.8% to 21.7% Efficiency with CdS Buffer and 21.0% Cd-Free

被引：172

作者：

Friedlmeier, Theresa Magorian ^{[1
]}

Jackson, Philip ^{[1
]}

Bauer, Andreas ^{[1
]}

Hariskos, Dimitrios ^{[1
]}

Kiowski, Oliver ^{[1
]}

Wuerz, Roland ^{[1
]}

Powalla, Michael ^{[1
]}

机构：

[1] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 05期

关键词：

Buffer layers; coevaporation; Cu(In; Ga); Se-2; (CIGS); heterojunctions; photovoltaic cells; scanning electron microscopy; short-circuit currents; thin-film devices;

D O I：

10.1109/JPHOTOV.2015.2458039

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

New processing developments in the Cu(In, Ga)Se-2 (CIGS)-based solar cell technology have enabled best cell efficiencies to exceed 21%. The key innovation involves the alkali post-deposition treatment (PDT) of the CIGS film. Furthermore, the range of optimal CIGS growth parameters and the minimal thickness of the CdS buffer layer is affected by the process modifications. In 2013, we reported a 20.8% record device with PDT. Later optimizations, e.g., in the composition profile and CdS buffer layer thickness as discussed in this study, enabled us to increase the photocurrent density with only a slight loss in open-circuit voltage and unchanged fill factor, resulting in the current world record of 21.7% efficiency. Furthermore, a record efficiency of 21.0% could be achieved with a Cd-free Zn(O,S) buffer layer. This contribution presents measurements, simulations, and a discussion of the photocurrent increase.

引用

页码：1487 / 1491

页数：5

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