A continuous, analytic drain-current model for DG MOSFETs

被引:316
作者
Taur, Y [1 ]
Liang, XP [1 ]
Wang, W [1 ]
Lu, HX [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
modeling; MOSFETs; transistors;
D O I
10.1109/LED.2003.822661
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I-ds(V-g, V-ds) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.
引用
收藏
页码:107 / 109
页数:3
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