Improved retention characteristic of charge-trapped flash device with sealing layer/Al2O3 or Al2O3/high-k stacked blocking layers

被引：0

作者：

Ye, Zong-Hao ^{[1
]}

Chang-Liao, Kuei-Shu ^{[1
]}

Shiu, Feng-Wen ^{[1
]}

Wang, Tien-Ko ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

Charge trapping; Flash memory; High-k; Stacked blocking layer; Charge retention; NONVOLATILE MEMORY; OPERATION; DESIGN; IMPACT; OXIDE;

D O I：

10.1016/j.mee.2011.03.085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although programming and erase speeds of charge trapping (CT) flash memory device are improved by using Al2O3 as blocking layer, its retention characteristic is still a main issue. CT flash memory device with Al2O3/high-k stacked blocking layer is proposed in this work to enhance data retention. Moreover, programming and erase speeds are slightly improved. In addition, sealing layer (SL), which is formed by an advanced clustered horizontal furnace between charge trapping layer and Al2O3 as one of the blocking layers is also studied. The retention characteristic is enhanced by SL approach due to lower gate leakage current with less defect. With the combination of SL and Al2O3/high-k stacked blocking layer approaches, retention property can be further improved. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1194 / 1197

页数：4

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