Atomic structure of the Te/Si(100)-(2x1) surface

被引:1
作者
Wiame, F
Dumont, J
Sporken, R
Verstraete, M
Gonze, X
机构
[1] Fac Univ Notre Dame Paix, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium
[2] Catholic Univ Louvain, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 03期
关键词
D O I
10.1103/PhysRevB.72.033302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the atomic structure of the Te/Si(100)-(2x1) surface using the density functional theory. A new model of reconstruction for this surface, based on a two-layers scheme, is proposed. In this model, Te atoms are situated in twofold bridge sites in the first two layers. Small shifts of Te atoms, with respect to the perfect bridge positions, are noticed in one of the two layers and probably give rise to a slightly disordered surface. This model is in agreement with all the experimental data available and in particular with the experimentally observed Te coverage of one monolayer. Comparison between total energies obtained for this surface and the Te/Si(100)-(1x1) surface shows a better stability for the (2x1) in agreement with what has been reported in the literature.
引用
收藏
页数:4
相关论文
共 26 条
[1]   Photoemission studies of the interactions of CdTe and Te with Si(100) [J].
Bennett, MR ;
Cafolla, AA ;
Cairns, JW ;
Dunscombe, CJ ;
Williams, RH .
SURFACE SCIENCE, 1996, 360 (1-3) :187-199
[2]   Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100) [J].
Bennett, MR ;
Dunscombe, CJ ;
Cafolla, AA ;
Cairns, JW ;
Macdonald, JE ;
Williams, RH .
SURFACE SCIENCE, 1997, 380 (2-3) :178-189
[3]   A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100) [J].
Burgess, SR ;
Cowie, BCC ;
Wilks, SP ;
Dunstan, PR ;
Dunscombe, CJ ;
Williams, RH .
APPLIED SURFACE SCIENCE, 1996, 104 :152-157
[4]  
DINARDO S, 1995, J ELECTRON SPECTROSC, V71, P39, DOI 10.1016/0368-2048(94)02249-6
[5]   Fast radix 2, 3, 4, and 5 kernels for fast Fourier transformations on computers with overlapping multiply-add instructions [J].
Goedecker, S .
SIAM JOURNAL ON SCIENTIFIC COMPUTING, 1997, 18 (06) :1605-1611
[6]   First-principles computation of material properties: the ABINIT software project [J].
Gonze, X ;
Beuken, JM ;
Caracas, R ;
Detraux, F ;
Fuchs, M ;
Rignanese, GM ;
Sindic, L ;
Verstraete, M ;
Zerah, G ;
Jollet, F ;
Torrent, M ;
Roy, A ;
Mikami, M ;
Ghosez, P ;
Raty, JY ;
Allan, DC .
COMPUTATIONAL MATERIALS SCIENCE, 2002, 25 (03) :478-492
[7]   THEORY OF POLAR SEMICONDUCTOR SURFACES [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496
[8]   GROWTH OF GE ON A TE ADSORBED SI(001) SURFACE [J].
HIGUCHI, S ;
NAKANISHI, Y .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4277-4285
[9]  
HIGUCHI S, 1991, SURF SCI, V254, pL465, DOI 10.1016/0039-6028(91)90625-3
[10]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919