Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

被引：21

作者：

Blacksberg, J ^{[1
]}

Hoenk, ME ^{[1
]}

Nikzad, S ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 285卷 / 04期

基金：

美国国家航空航天局;

关键词：

delta doping; surfaces; surface segregation; molecular beam epitaxy; semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2005.09.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2 x 10(14) cm(-2) in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (< 450 degrees C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：473 / 480

页数：8

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