Spatially highly resolved study of AFM scanning tip-quantum dot local interaction

被引：17
作者：
Kicin, S [1 ]
Pioda, A
Ihn, T
Sigrist, M
Fuhrer, A
Ensslin, K
Reinwald, M
Wegscheider, W
机构：
[1] ETH, CH-8093 Zurich, Switzerland
[2] Univ Regensburg, Inst Expt & Angew Phys, D-8400 Regensburg, Germany
来源：
NEW JOURNAL OF PHYSICS | 2005年 / 7卷
关键词：
D O I：
10.1088/1367-2630/7/1/185
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Scanning-gate imaging of semiconductor quantum dots (QDs) promises access to probability distributions of quantum states. It could therefore be a novel tool for designing and optimizing tailored quantum states in such systems. A detailed study of a lithographically defined semiconductor QD in the Coulomb-blockade regime is presented, making use of the scanning-gate technique at a base temperature of 300 mK. The method allows a one-by-one manipulation of electrons in the structure. The obtained images interpreted with a suitable QD model guide the way to a local investigation of the electronic interior of the QD. Future perspectives of scanning-gate experiments on QDs are discussed.
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页数：18
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