Low-frequency noise in CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：0

作者：

Scola, J. ^{[1
]}

Polovy, H. ^{[1
]}

Fermon, C. ^{[1
]}

Pannetier-Lecoeur, M. ^{[1
]}

Feng, G. ^{[2
]}

Fahy, K. ^{[2
]}

Coey, J. M. D. ^{[2
]}

机构：

[1] CEA Saclay, DSM, DRECAM, SPEC,Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France

[2] Trinity Coll Dublin, CRANN, Sch Phys, Dublin 2, Ireland

来源：

NOISE AND FLUCTUATIONS | 2007年 / 922卷

关键词：

magnetic tunnel junctions; resistance noise; charge trapping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. We investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. We report an extremely low 1/f noise, compared to magnetic junctions with Al2O3 barriers.

引用

页码：289 / +

页数：3

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