In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (11(2)over-bar2) GaN

被引：15
作者：
Wu, Zhengyuan [1 ,2 ,3 ]
Song, Pengyu [1 ,2 ,3 ]
Shih, Tienmo [1 ,4 ]
Pang, Linna [5 ]
Chen, Li [1 ]
Lin, Guangyang [1 ]
Lin, Dingqu [1 ]
Li, Cheng [1 ]
Liu, Ran [2 ,3 ]
Shen, Wenzhong
Kang, Junyong [1 ]
Fang, Zhilai [1 ,2 ,3 ]
机构：
[1] Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China
[2] Fudan Univ, Minist Educ, Engn Res Ctr Adv Lighting Technol, Shanghai 200433, Peoples R China
[3] Fudan Univ, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China
[4] CKX Labs, Changkeng 362421, Peoples R China
[5] Shanghai Jiao Tong Univ, Dept Phys, Minist Educ, Key Lab Artificial Struct & Quantum Control, Shanghai 200240, Peoples R China
来源：
CRYSTAL GROWTH & DESIGN | 2017年 / 17卷 / 09期
基金：
中国国家自然科学基金;
关键词：
NITRIDE FILMS; SAPPHIRE; REDUCTION; ORIENTATION;
D O I：
10.1021/acs.cgd.7b00584
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Undesirable nonuniformly distributed defects and mixed ((1) over bar 103) and (11 (2) over bar2) phases during the growth of semipolar GaN films on m-plane sapphire substrates have been known to exist. In our study, we developed an interface-modification technique to achieve in situ site-specific Ga filling, nucleation, and nanograin growth, which efficiently blocked threading defects there. We have identified the mechanism governing the site-specific 'Ga filling and nanograin growth into Ga-rich islands based on surface atomic structures and theories of Gibbs free energy. Using the interface modification, we have achieved high-quality semipolar (11 (2) over bar2) GaN films that enjoy merits of a very low basal-plane stacking fault density of similar to 9 X 10(3) cm(-1), a low threading dislocation density of similar to 9 X 10(7) cm(-2), and the strong band-edge-emission-dominated luminescence.
引用
收藏
页码：4687 / 4693
页数：7
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