n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

被引：23

作者：

Zhang, Xiao-Mei ^{[1
]}

Golberg, Dmitri ^{[1
]}

Bando, Yoshio ^{[1
]}

Fukata, Naoki ^{[1
]}

机构：

[1] Natl Inst Mat Sci, World Premier Int WPI Res Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

来源：

NANOSCALE | 2012年 / 4卷 / 03期

关键词：

SILICON; NANOWIRES;

D O I：

10.1039/c2nr11752e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D hetero-junction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.

引用

页码：737 / 741

页数：5

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