Theory of radiative and nonradiative processes in silicon nanocrystallites

被引：0
作者：
Delerue, C [1 ]
Allan, G [1 ]
Lannoo, M [1 ]
机构：
[1] Inst Elect & Microelect Nord, Dept ISEN, F-59652 Villeneuve Dascq, France
来源：
LIGHT EMISSION IN SILICON: FROM PHYSICS TO DEVICES | 1998年 / 49卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：253 / 301
页数：49
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