Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)

被引：28

作者：

Flege, Jan Ingo ^{[1
]}

Kaemena, Bjoern ^{[1
]}

Gevers, Sebastian ^{[2
]}

Bertram, Florian ^{[3
]}

Wilkens, Torsten ^{[1
]}

Bruns, Daniel ^{[2
]}

Baetjer, Jan ^{[3
]}

Schmidt, Thomas ^{[1
]}

Wollschlaeger, Joachim ^{[2
]}

Falta, Jens ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany

[2] Univ Osnabruck, Dept Phys, D-49069 Osnabruck, Germany

[3] Hamburger Synchrotronstrahlungslab Deutsch Elektr, D-22607 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 23期

关键词：

TEMPERATURE EPITAXIAL-GROWTH; PHOTOELECTRON-SPECTROSCOPY; CRYSTAL-STRUCTURE; CEO2; LAYERS; THIN-FILMS; DESORPTION; DIELECTRICS; STABILITY; SURFACES; CL;

D O I：

10.1103/PhysRevB.84.235418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface.

引用

页数：9

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