Mitigating Defects within Silicon Carbide Epitaxy

被引：12

作者：

Caldwell, J. D. ^{[1
]}

Stahlbush, R. E. ^{[1
]}

Mahadik, N. A. ^{[1
]}

机构：

[1] USN, Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 03期

关键词：

GROWN STACKING-FAULTS; ELECTRICAL-PROPERTIES; 4H-SIC EPILAYERS; DISLOCATIONS; DIODES; DEGRADATION; PROPAGATION; SUBSTRATE; BREAKDOWN; DRIFT;

D O I：

10.1149/2.069203jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Over the past decade, significant progress has been made in reducing the density of several extended and point defects within silicon carbide substrates and epitaxy. For instance, great success has been achieved in the elimination of micropipes and reductions in the lifetime killing point defect Z(1/2). However, a wide-array of extended defects persist, ranging from various types of stacking faults and threading dislocations. An overview of the current status of these efforts is outlined here. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.069203jes] All rights reserved.

引用

页码：R46 / R51

页数：6

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