Advanced Lithography Simulation for Various 3-Dimensional Nano/Microstructuring Fabrications in Positive- and Negative-Tone Photoresists

被引:7
作者
Kim, Sang-Kon [1 ]
Oh, Hye-Keun [1 ]
Jung, Young-Dae [1 ]
An, Ilsin [1 ]
机构
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
关键词
Lithography; Lithography Simulation; Negative Resist; Chemically Amplified Resist; Multi-Exposures; Inverse Lithography; Embedded Channels; MEMS; OPTICAL LITHOGRAPHY; RESIST;
D O I
10.1166/jnn.2011.3288
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photoresist lithography has been applied to the fabrication of micro/nano devices, such as microfluidic structures, quantum dots, and photonic devices, in MEMS (micro-electro mechanical systems) and NEMS (nano-electro-mechanical systems). In particular, nano devices can be expected to present different physical phenomena due to their three-dimensional (3D) structure. The flexible 3D micro/nano fabrication technique and its process simulation have become among the major topics needed to understand nano-mechanical phenomena. For this purpose, the moving-mask technology and the lithography processes for the positive- and negative-tone photoresists were modeled. The validity of the simulation of the proposed 3D nano/microstructuring was successfully confirmed by comparing the experiment results and the simulated results. Hence, the developed model and the simulation can present and optimize photoresist characteristics and lithography process conditions due to the various 3D nano/microstructures. They could be help in the understanding of nanomaterial and mechanical phenomena.
引用
收藏
页码:528 / 532
页数:5
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