Electrical Properties of the Ge2Sb2Te5 Thin Films for Phase Change Memory Application

被引：14

作者：

Lazarenko, P. I. ^{[1
]}

Sherchenkov, A. A. ^{[1
]}

Kozyukhin, S. A. ^{[2
]}

Babich, A. V. ^{[1
]}

Timoshenkov, S. P. ^{[1
]}

Gromov, D. G. ^{[1
]}

Shuliatyev, A. S. ^{[1
]}

Redichev, E. N. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol MIET, Bld 1,Shokin Sq, Moscow 124498, Russia

[2] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, 31 Leninsky Prospect, Moscow 119991, Russia

来源：

PROCEEDINGS OF THE 5TH INTERNATIONAL CONGRESS IN ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE CONGRESS & EXHIBITION (APMAS '15) | 2016年 / 1727卷

关键词：

phase-change memory; Ge2Sb2Te5; electrical properties;

D O I：

10.1063/1.4945968

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study I-V characteristic, temperature dependence of resistivity, thermopower, switching and memory effect were investigated for GST225 thin films. Resistivities, ratio of the resistivities of amorphous and crystalline states, activation energies of conductivity, temperature of phase transition, Seebeck coefficient, transition time due to the transformation from OFF to ON states and full recording time were estimated. It was shown that transport mechanism based on the two-channel model has a good correlation with experimental results for Ohmic region of I-V characteristic, while space-charge limited current mechanism for power region.

引用

页数：6

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