Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers

被引：0

作者：

Larson, MC ^{[1
]}

Kondow, M ^{[1
]}

Kitatani, T ^{[1
]}

Nakahara, K ^{[1
]}

Tamura, K ^{[1
]}

Yazawa, Y ^{[1
]}

Okai, M ^{[1
]}

Inoue, H ^{[1
]}

Uomi, K ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS II | 1998年 / 3286卷

关键词：

vertical-cavity surface-emitting lasers (VCSELs); semiconductor lasers; long wavelength; optical communications; optical data interconnects;

D O I：

10.1117/12.305466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInNAs is a novel laser diode active layer material which holds great promise for low-cost optical fiber transmission applications requiring emission wavelengths near 1.3 mu m. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Continuous-wave room-temperature photo-pumped laser oscillation has been demonstrated in vertical cavity laser designs employing single or multiple GaInNAs quantum wells, with lasing wavelengths as long as 1.256 mu m. Electrically-injected devices have achieved pulsed operation at room temperature and above, with a minimum threshold current density of 3.1 kA/cm(2), slope efficiency above 0.04 W/A, and output power above 5 mW for 45 mu m-diameter devices. Threshold current has exhibited minimal dependence on temperature from 20 degrees C to 60 degrees C, and laser oscillation is observed for temperatures at high as 95 degrees C.

引用

页码：30 / 40

页数：11