ESD robustness of a BiCMOS SiGe technology

被引：8

作者：

Voldman, S ^{[1
]}

Juliano, P ^{[1
]}

Schmidt, N ^{[1
]}

Botula, A ^{[1
]}

Johnson, R ^{[1
]}

Lanzerotti, L ^{[1
]}

Feilschenfeld, N ^{[1
]}

Joseph, A ^{[1
]}

Malinowski, J ^{[1
]}

Eld, E ^{[1
]}

Gross, V ^{[1
]}

Brennan, C ^{[1
]}

Dunn, J ^{[1
]}

Harame, D ^{[1
]}

Herman, D ^{[1
]}

Meyerson, B ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Commun Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BICMOS active and passive elements is discussed.

引用

页码：214 / 217

页数：4

共 50 条

[41] 1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology
Johnson, RA
Zierak, MJ
Outama, KB
Bahn, TC
Joseph, AJ
Cordero, CN
Malinowski, J
Bard, KA
Weeks, TW
Milliken, RA
Medve, TJ
May, GA
Chong, W
Walter, KM
Tempest, SL
Chau, BB
Boenke, M
Nelson, MW
Harame, DL
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 217 - 220
[42] ESD protection for BiCMOS circuits
Joshi, S
Juliano, P
Rosenblum, E
Kaatz, G
Kang, SM
PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, : 218 - 221
[43] A complementary BiCMOS technology with high speed npn and pnp SiGe:: CHBTs
Heinemann, B
Barth, R
Bolze, D
Drews, J
Formanek, P
Fursenko, O
Glante, M
Glowatzki, K
Gregor, A
Haak, U
Höppner, W
Knoll, D
Kurps, R
Marschmeyer, S
Orlowski, S
Rücker, H
Schley, P
Schmidt, D
Scholz, R
Winkler, W
Yamamoto, Y
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 117 - 120
[44] A Novel Dual-SCR ESD Protection Structure in 0.35-μm SiGe BiCMOS Process
Hou Fei
Liu Nie
Liu Jizhi
Liu Zhiwei
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
[45] D-band Stacked Amplifiers based on SiGe BiCMOS Technology
Yun, Jongwon
Kim, Hyunchul
Song, Kiryong
Rieh, Jae-Sung
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (02) : 276 - 279
[46] A low-voltage triggering SCR for ESD protection in a 0.35um SiGe BiCMOS process
Liao Changjun
Cheng Hui
Liu Jizhi
Zhao Liu
Tian Rui
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
[47] 0.13μm SiGe BiCMOS Technology for mm-Wave Applications
Avenier, G.
Diop, M.
Chevalier, P.
Troillard, G.
Loubet, N.
Bouvier, J.
Depoyan, L.
Derrier, N.
M, Buczko
C, Leyris
S, Boret
Montusclat, S.
Margain, A.
Pruvost, S.
Nicolson, S. T.
Yau, K. H. K.
Revil, N.
Gloria, D.
Dutartre, D.
Voinigescu, S. P.
Chantre, A.
PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, : 89 - +
[48] A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology
Zhou P.
Chen J.
Yan P.
Hou D.
Gao H.
Hong W.
Chen, Jixin (jxchen@seu.edu.cn), 1600, Institute of Electrical and Electronics Engineers Inc. (04): : 44 - 47
[49] MEMS Module Integration into SiGe BiCMOS Technology for Embedded System Applications
Kaynak, M.
Wietstruck, M.
Zhang, W.
Scholz, R.
Drews, J.
Marschmeyer, S.
Knoll, D.
Korndorfer, F.
Schulz, K.
Wipf, C.
Wolansky, D.
Kaletta, K.
Wegner, M.
Ehrmann, O.
Tillack, Bernd
ULSI PROCESS INTEGRATION 7, 2011, 41 (07): : 191 - 202
[50] Designs of 60 GHz Front-Ends in SiGe BiCMOS Technology
Sun, Yaoming
Glisic, Srdjan
APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 1643 - 1646

← 1 2 3 4 5 →