ESD robustness of a BiCMOS SiGe technology

被引：8

作者：

Voldman, S ^{[1
]}

Juliano, P ^{[1
]}

Schmidt, N ^{[1
]}

Botula, A ^{[1
]}

Johnson, R ^{[1
]}

Lanzerotti, L ^{[1
]}

Feilschenfeld, N ^{[1
]}

Joseph, A ^{[1
]}

Malinowski, J ^{[1
]}

Eld, E ^{[1
]}

Gross, V ^{[1
]}

Brennan, C ^{[1
]}

Dunn, J ^{[1
]}

Harame, D ^{[1
]}

Herman, D ^{[1
]}

Meyerson, B ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Commun Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BICMOS active and passive elements is discussed.

引用

页码：214 / 217

页数：4

共 50 条

[21] Active Metamaterial Transmission Line with Gain in SiGe BiCMOS Technology
Zhou, C. X.
Li, Yihu
Xiong, Y. Z.
Wu, W.
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL, 2016, 31 (05): : 551 - 554
[22] Low noise considerations in SiGe BiCMOS technology for RF applications
Borgarino, M.
Kovacic, S.
Lafontaine, H.
Zhou, Z. Feng
Plana, R.
ITG-Fachbericht, (157): : 39 - 44
[23] A Terahertz Imaging Receiver in 0.13μm SiGe BiCMOS Technology
Sengupta, Kaushik
Seo, Dongjin
Hajimiri, Ali
2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2011,
[24] A SiGe HBT BiCMOS technology for mixed signal RF applications
Ahlgren, DC
Freeman, G
Subbanna, S
Groves, R
Greenberg, D
Malinowski, J
Nguyen-Ngoc, D
Jeng, SJ
Stein, K
Schonenberg, K
Kiesling, D
Martin, B
Wu, S
Harame, DL
Meyerson, B
PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1997, : 195 - 197
[25] Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures
Ying, Hanbin
Teng, Jeffrey W.
Cressler, John D.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1439 - 1445
[26] A 23 GHz low power VCO in SiGe BiCMOS technology
黄银坤
吴旦昱
周磊
江帆
武锦
金智
Journal of Semiconductors, 2013, 34 (04) : 76 - 79
[27] Low-voltage triggering SCRs for ESD protection in a 0.35 μm SiGe BiCMOS process
Liu JiZhi
Zeng Yaohui
Liu Zhiwei
Zhao Jianming
Cheng Hui
Liu Nie
MICROELECTRONICS RELIABILITY, 2017, 73 : 122 - 128
[28] Analysis of a zener-triggered bipolar ESD structure in a BiCMOS technology
Coffing, D
Ida, R
PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, : 31 - 34
[29] SiGe BiCMOS for Optoelectronics
Knoll, D.
Lischke, S.
Awny, A.
Zimmermann, L.
SIGE, GE, AND RELATED MATERIALS: MATERIALS, PROCESSING, AND DEVICES 7, 2016, 75 (08): : 121 - 139
[30] The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGE technology
Voldman, S
Lanzerotti, L
Morris, W
Rubin, L
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 143 - 151

← 1 2 3 4 5 →