ESD robustness of a BiCMOS SiGe technology

被引：8

作者：

Voldman, S ^{[1
]}

Juliano, P ^{[1
]}

Schmidt, N ^{[1
]}

Botula, A ^{[1
]}

Johnson, R ^{[1
]}

Lanzerotti, L ^{[1
]}

Feilschenfeld, N ^{[1
]}

Joseph, A ^{[1
]}

Malinowski, J ^{[1
]}

Eld, E ^{[1
]}

Gross, V ^{[1
]}

Brennan, C ^{[1
]}

Dunn, J ^{[1
]}

Harame, D ^{[1
]}

Herman, D ^{[1
]}

Meyerson, B ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Commun Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BICMOS active and passive elements is discussed.

引用

页码：214 / 217

页数：4

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