New method for approaching to the loading free process for photomask Cr etching.

被引：2

作者：

Jang, IY ^{[1
]}

Lee, JY ^{[1
]}

Moon, SY ^{[1
]}

Choi, SW ^{[1
]}

Sohn, JM ^{[1
]}

机构：

[1] Samsung Elect Co, Semicond R&D Ctr, Photomask Team, Yongin 449711, Kyunggi Do, South Korea

来源：

23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷

关键词：

photomask; dry etch; Cr; loading effect; HCL; selectivity; density;

D O I：

10.1117/12.517842

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In photomask manufacturing, etch loading effect is one of the most serious problem. The equal size of isolated clear patterns, each of which is surrounded by different pattern density, can shows different CD (Critical Dimension) results after Cr etching process. Furthermore, as the feature size decreases and pattern density increases, the burden of Cr loading effect in mask fabrication is more enlarged than ever. In this paper, we will present the new method for approaching to the loading free process in photomask Cr dry etch.

引用

页码：59 / 65

页数：7