Efficient luminescence from porous silicon

被引：13
作者：
Daami, A
Bremond, G
Stalmans, L
Poortmans, J
机构：
[1] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France
[2] Interuniv Micro Elect Ctr VZW, B-3001 Louvain, Belgium
来源：
JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期
关键词：
porous silicon; photoluminescence; passivation;
D O I：
10.1016/S0022-2313(98)00090-8
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct-and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：169 / 172
页数：4
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