Magnetic and Optical Properties of Manganese Ion Implanted Gallium Nitride and Their Effects on Silicon Ion Irradiation

被引：0
|
作者：
Pradhan, N. S. [1 ]
Dubey, S. K. [1 ]
Yadav, A. D. [1 ]
Panigrahi, B. K. [2 ]
Nair, K. G. M. [2 ]
Venugopal, A. [3 ]
Jangam, G. [3 ]
机构：
[1] Univ Mumbai, Dept Phys, Bombay 400098, Maharashtra, India
[2] Indira Gandhi Ctr Atom Res, Div Sci Mat, Kalpakkam 603102, Tamil Nadu, India
[3] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
来源：
INTERNATIONAL CONFERENCE ON MAGNETIC MATERIALS (ICMM-2010) | 2010年 / 1347卷
关键词：
Ion implantation; Gallium nitride; SQUID; Photoluminescence; ROOM-TEMPERATURE FERROMAGNETISM; GAN;
D O I：
10.1063/1.3601828
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetic and Optical properties of 325 keV Mn+ ion implanted gallium nitride with various fluences were characterized by superconducting quantum interference devices and Photoluminescence techniques. The coercive field of implanted samples for the fluence of 1.75 x 10(15), 1.5 x 10(16) and 2 x 10(16) ions cm(-2) were found to be 73, 110, 130 (Oe) respectively. The observed increase in the ferromagnetism in implanted samples after irradiation with 5 MeV silicon ions is due to recovery of the implantation defects. The Curie temperature for the ion fluences 1.75 x 10(15), 1.5 x 10(16) and 2 x 10(16) were found to 309 K, 342 K and 350 K respectively. Photoluminescence spectra of the samples recorded for various ion fluences at room temperature have shown the band in the range of photon energies from 1.50 to 3.50 eV. The yellow band observed at 2.28 eV attributed to intrinsic gallium defects. The peak appeared around 2.44 eV confirmed the donor - Mn (D, Mn) transition.
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页码：248 / 251
页数：4
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