Effects of Ar+ ion sputtering on morphology and electric conductance of 6H-SiC (0001) surface

被引：0
|
作者：
Mazur, P. [1 ]
Zuber, S. [1 ]
Grodzicki, M. [1 ]
Ciszewski, A. [1 ]
机构：
[1] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2008年 / 26卷 / 02期
关键词：
silicon carbide; metal contact; ion sputtering;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper reports surface modification of SiC by Ar+ ion sputtering. Observations were performed with an ultra high vacuum atomic force microscope operating in the contact mode. The surface morphology and topography were investigated with simultaneous measurement of local changes in electric conductance. We show that the Ar+ ion bombardment of the 6H-SiC wafer surface affects the surface stoichiometry, changing the character of a metal/SiC contact from the Schottky barrier diode type into an ohmic contact type.
引用
收藏
页码：265 / 269
页数：5
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