Effects of Ar+ ion sputtering on morphology and electric conductance of 6H-SiC (0001) surface

被引：0
|
作者：
Mazur, P. [1 ]
Zuber, S. [1 ]
Grodzicki, M. [1 ]
Ciszewski, A. [1 ]
机构：
[1] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2008年 / 26卷 / 02期
关键词：
silicon carbide; metal contact; ion sputtering;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper reports surface modification of SiC by Ar+ ion sputtering. Observations were performed with an ultra high vacuum atomic force microscope operating in the contact mode. The surface morphology and topography were investigated with simultaneous measurement of local changes in electric conductance. We show that the Ar+ ion bombardment of the 6H-SiC wafer surface affects the surface stoichiometry, changing the character of a metal/SiC contact from the Schottky barrier diode type into an ohmic contact type.
引用
收藏
页码：265 / 269
页数：5
相关论文
共 50 条
  • [1] Cr ohmic contact on an Ar+ ion modified 6H-SiC(0001) surface
    Grodzicki, Milosz
    Chrzanowski, Jan
    Mazur, Piotr
    Zuber, Stefan
    Ciszewski, Antoni
    OPTICA APPLICATA, 2009, 39 (04) : 765 - 772
  • [2] THE (0001)-SURFACE OF 6H-SIC - MORPHOLOGY, COMPOSITION AND STRUCTURE
    STARKE, U
    BRAM, C
    STEINER, PR
    HARTNER, W
    HAMMER, L
    HEINZ, K
    MULLER, K
    APPLIED SURFACE SCIENCE, 1995, 89 (02) : 175 - 185
  • [3] Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study
    He Xiao-Min
    Chen Zhi-Ming
    Li Lian-Bi
    CHINESE PHYSICS LETTERS, 2015, 32 (03)
  • [4] Relaxation of 6H-SiC(0001) Surface and Si Adsorption on 6H-SiC(0001):an ab initio Study
    贺小敏
    陈治明
    李连碧
    Chinese Physics Letters, 2015, 32 (03) : 101 - 104
  • [5] Relaxation of 6H-SiC(0001) Surface and Si Adsorption on 6H-SiC(0001):an ab initio Study
    贺小敏
    陈治明
    李连碧
    Chinese Physics Letters, 2015, (03) : 101 - 104
  • [6] MODELING MORPHOLOGY CHANGE FOR Si SURFACE AT Ar+ ION SPUTTERING
    Kharchenko, D. O.
    Kharchenko, V. O.
    PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2011, (02): : 16 - 21
  • [7] Investigation of the 6H-SiC (0001) surface by AFM
    Jiang, Shouzhen
    Yu, Guangwei
    Wang, Yingmin
    Hu, Xiaobo
    Xu, Xiangang
    Jiang, Minhua
    JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, 2008, 15 (05): : 654 - 658
  • [8] Stable surface reconstructions on 6H-SiC(0001¯)
    Bernhardt, J.
    Nerding, M.
    Starke, U.
    Heinz, K.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 61 : 207 - 211
  • [9] Stable surface reconstructions on 6H-SiC(0001)
    Bernhardt, J
    Nerding, M
    Starke, U
    Heinz, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 207 - 211
  • [10] Morphology of sublimation grown 6H-SiC(0001) surfaces
    Schulz, D
    Dolle, J
    Rost, HJ
    Siche, D
    Wollweber, J
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 243 - 246
12345