Broad-band amplification using a novel amplifier topology

被引:7
|
作者
Di Muro, R
Lowe, D
Wilson, S
机构
[1] Nortel Networks Ltd, Harlow Labs, Harlow CM17 9NA, Essex, England
[2] Univ London Imperial Coll Sci Technol & Med, London SW7 2BZ, England
关键词
erbium-doped silica fibers; erbium-doped tellurite fiber amplifiers; extended band amplification; optical amplifiers;
D O I
10.1109/68.950739
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new broad-band amplifier topology that provides a continuous gain across 75 mn (1528-1603 nm) of optical bandwidth using Er3+-doped SiO2 fiber is demonstrated. The noise figure is low and does not present any discontinuity across the entire amplification bandwidth. The topology has a buried 1550/1585-nm splitter to reduce input signal loss and to provide amplified spontaneous emission suppression. The topology has been optimized using hybrid fiber; Er3+-doped SiO2 for the first stage and Er3+-doped TeO2 for the second stage, achieving 82 nm (1526-1618 run) of optical bandwidth.
引用
收藏
页码:1073 / 1075
页数:3
相关论文
共 50 条