Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications

被引：17

作者：

Reboud, Vincent ^{[1
]}

Widiez, Julie ^{[1
]}

Hartmann, Jean Michel ^{[1
]}

Dias, Guilherme Osvaldo ^{[1
]}

Fowler, Daivid ^{[1
]}

Chelnokov, Alexei ^{[1
]}

Gassenq, Alban ^{[2
,3
]}

Guilloy, Kevin ^{[2
,3
]}

Pauc, Nicolas ^{[2
,3
]}

Calvo, Vincent ^{[2
,3
]}

Geiger, Richard ^{[4
,5
]}

Zabel, T. ^{[4
]}

Faist, Jerome ^{[5
]}

Sigg, Hans ^{[4
]}

机构：

[1] Univ Grenoble Alpes, CEA Leti Minatec, F-38054 Grenoble, France

[2] Univ Grenoble Alpes, INAC SP2M, F-38000 Grenoble, France

[3] CEA, F-38000 Grenoble, France

[4] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[5] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

SILICON PHOTONICS X | 2015年 / 9367卷

关键词：

D O I：

10.1117/12.2079393

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 mu m). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.

引用

页数：6

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