Characteristics of long wavelength InGaN quantum well laser diodes

被引：51

作者：

Kim, K. S. ^{[1
]}

Son, J. K. ^{[1
]}

Lee, S. N. ^{[1
]}

Sung, Y. J. ^{[1
]}

Paek, H. S. ^{[1
]}

Kim, H. K. ^{[1
]}

Kim, M. Y. ^{[1
]}

Ha, K. H. ^{[1
]}

Ryu, H. Y. ^{[1
]}

Nam, O. H. ^{[1
]}

Jang, T. ^{[1
]}

Park, Y. J. ^{[1
]}

机构：

[1] Samsung Electromech Co LTD, Corp R&D Inst, OS Lab, Suwon 443743, Kyunggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2892634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated the long wavelength (485 nm) lasing of InGaN laser diodes under continuous wave condition at room temperature over 10 mW. Two InGaN laser structures were adapted with different indium composition for InGaN optical confinement layers (OCLs) below quantum wells. The blue shift of electroluminescence (EL) was reduced in InGaN laser diodes grown on 3% In concentration in InGaN OCL compared with 1.5% In concentration in InGaN OCL. The EL peak for laser diode with 3% In concentration in InGaN OCL occurs at longer wavelength for all current levels compared to the laser with 1.5% In concentration in InGaN OCL. In addition, the laterally nonuniform InGaN wells grown on 1.5% In concentration in InGaN OCL was verified by the cross-sectional view of InGaN active layer using high-resolution transmission electron microscopy. (C) 2008 American Institute of Physics.

引用

页数：3

共 15 条

[1] High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers [J].

Akasaka, T ;

Gotoh, H ;

Saito, T ;

Makimoto, T .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3089-3091

[2] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[3] Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters [J].

Cho, YH ;

Lee, SK ;

Kwack, HS ;

Kim, JY ;

Lim, KS ;

Kim, HM ;

Kang, TW ;

Lee, SN ;

Seon, MS ;

Nam, OH ;

Park, YJ .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2578-2580

[4] High-power and wide wavelength range GaN-based laser diodes [J].

Kozaki, Tokuya ;

Matsumura, Hiroaki ;

Sugimoto, Yasunobu ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

NOVEL IN-PLANE SEMICONDUCTOR LASERS V, 2006, 6133

[5] Surface modifications and optical properties of blue InGaN single quantum well by in-situ thermal treatments [J].

Lee, Sung-Nam ;

Paek, H. S. ;

Son, J. K. ;

Sakong, T. ;

Kwon, Y. N. ;

Nam, O. H. ;

Park, Y. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007, 4 (01) :141-+

[6] Exciton localization and the Stokes' shift in InGaN epilayers [J].

Martin, RW ;

Middleton, PG ;

O'Donnell, KP ;

Van der Stricht, W .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :263-265

[7] Amber InGaN-based light-emitting diodes operable at high ambient temperatures [J].

Mukai, T ;

Narimatsu, H ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A) :L479-L481

[8] Recent progress of AlInGaN laser diodes [J].

Nagahama, SI ;

Sugimoto, Y ;

Kozaki, T ;

Mukai, T .

Novel In-Plane Semiconductor Lasers IV, 2005, 5738 :57-62

[9] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[10]

NAM OH, 2006, INT WORKSH NITR SEM, P7204

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