Magnetic Proximity Effect in Graphene/CrBr3 van der Waals Heterostructures

被引:113
作者
Tang Chaolong [1 ]
Zhang Zhaowei [1 ]
Lai Shen [1 ]
Tan Qinghai [1 ]
Gao Wei-bo [1 ,2 ,3 ]
机构
[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore
[2] Nanyang Technol Univ, Photon Inst, Singapore 637371, Singapore
[3] Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore 637371, Singapore
基金
新加坡国家研究基金会;
关键词
CrBr3; graphene; magnetic proximity effect; van der Waals; Zeeman spin Hall effect; INTRINSIC FERROMAGNETISM; DIRAC POINT; FIELD; SPIN;
D O I
10.1002/adma.201908498
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. Efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through the magnetic proximity effect (MPE). Here, the investigation of MPE in 2D graphene/CrBr3 van der Waals heterostructures is reported, which is probed by the Zeeman spin Hall effect through non-local measurements. Quantitative estimation of the Zeeman splitting field demonstrates a significant MPE field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R-XX,R-D with increasing magnetic field near nu = 0 may be attributed to the MPE-induced new ground state phases. This MPE revealed in the graphene/CrBr3 van der Waals heterostructures therefore provides a solid physics basis and key functionality for next-generation 2D spin logic and memory devices.
引用
收藏
页数:7
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