Effect of microwave irradiation on the electronic structure of ZnO

被引:3
作者
Yoshida, Kyohei [1 ]
Sonobe, Taro [2 ]
Zen, Heishun [1 ]
Hachiya, Kan [3 ]
Okumura, Kensuke [3 ]
Mishima, Kenta [3 ]
Inukai, Motoharu [3 ]
Negm, Hani [3 ]
Torgasin, Konstantin [3 ]
Omer, Mohamed [3 ]
Kinjo, Ryota [4 ]
Kii, Toshiteru [1 ]
Masuda, Kai [1 ]
Ohgaki, Hideaki [1 ]
机构
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Kyoto Univ, Res Adm Off, Sakyo Ku, Kyoto 6068501, Japan
[3] Kyoto Univ, Grad Sch Energy Sci, Sakyo Ku, Kyoto 6068501, Japan
[4] RIKEN, Spring Ctr 8, Sayo, Hyogo 6795148, Japan
基金
日本学术振兴会;
关键词
Electronic structure; Optical properties; Semiconductors; Inorganic compounds; Oxides; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; TEMPERATURE; DEFECTS; FILMS;
D O I
10.1016/j.jpcs.2015.03.013
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Modifying the electronic structure may allow a bulk material to efficiently absorb radiation as well as excite and emit atomic plasma. The interaction between microwaves and metal oxides is investigated by analyzing the electronic structure of ZnO with and without microwave (MW) irradiation using absorption, photoluminescence (PL), and PL excitation (PLE) spectroscopies and utilizing an ultraviolet synchrotron light source. MW irradiation lowers the energy of the absorption edge of ZnO producing defects. Additionally, MW irradiation causes a resonantly enhanced change in the intensity and peak shift of the PL band. These phenomena indicate that the defects generated by MW irradiation change the electronic structure of ZnO and the electron transition process. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:47 / 51
页数:5
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