Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment

被引：5

作者：

Menichelli, M. ^{[1
]}

Boscardin, M. ^{[2
,3
]}

Crivellari, M. ^{[3
]}

Davis, J. ^{[6
]}

Dunand, S. ^{[9
]}

Fano, L. ^{[1
,4
]}

Morozzi, A. ^{[1
,7
]}

Moscatelli, F. ^{[1
,5
]}

Movileanu-Ionica, M. ^{[1
]}

Passeri, D. ^{[1
,7
]}

Petasecca, M. ^{[6
]}

Piccini, M. ^{[1
]}

Rossi, A. ^{[1
,4
]}

Scorzoni, A. ^{[1
,7
]}

Servoli, L. ^{[1
]}

Verzellesi, G. ^{[2
,8
]}

Wyrsch, N. ^{[9
]}

机构：

[1] INFN, Sez Perugia, Perugia, Italy

[2] INFN TIPFA, Trento, Italy

[3] Fdn Bruno Kessler, Trento, Italy

[4] Univ Perugia, Dipartimento Fis, Perugia, Italy

[5] CNR IOM, Perugia, Italy

[6] Univ Wollongong, Ctr Med Radiat Phys, Wollongong, NSW 2522, Australia

[7] Univ Perugia, Dipartimento Ingn, Perugia, Italy

[8] Univ Modena & Reggio Emilia, Modena, Italy

[9] Ecole Polytech Fed Lausanne EPFL, Inst Microengn IMT, Neuchatel, Switzerland

来源：

JOURNAL OF INSTRUMENTATION | 2020年 / 15卷 / 04期

关键词：

Particle tracking detectors; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors; X-ray detectors; CIRCUIT;

D O I：

10.1088/1748-0221/15/04/C04005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 mu m. However MIP detection using planar structures has always been problematic due to the poor S/N ratio related to the high leakage current at high depletion voltage and the low charge collection efficiency. The usage of 3D detector architecture can be beneficial for the possibility to reduce inter-electrode distance and increase the thickness of the detector for larger charge generation compared to planar structures. Such a detector can be used for future hadron colliders for its radiation resistance and also for X-ray imaging. Furthermore the possibility of a-Si:H deposition on flexible materials (like kapton) can be exploited to build flexible and thin beam flux measurement detectors and x-ray dosimeters.

引用

页数：11

共 15 条

[1] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].