Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

被引：97

作者：

Aydogan, S. ^{[1
]}

Saglam, M. ^{[1
]}

Tueruet, A. ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 02期

关键词：

polyaniline; series resistance; Schottky contact; current voltage characteristics; organic/inorganic junction;

D O I：

10.1016/j.mee.2007.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：278 / 283

页数：6

共 26 条

[11] THE PLASTIC LED - A FLEXIBLE LIGHT-EMITTING DEVICE USING A POLYANILINE TRANSPARENT ELECTRODE [J].

GUSTAFSSON, G ;

TREACY, GM ;

CAO, Y ;

KLAVETTER, F ;

COLANERI, N ;

HEEGER, AJ .

SYNTHETIC METALS, 1993, 57 (01) :4123-4127

[12]

Iaranjeira JMG, 2002, BRAZ J PHYS, V32, P1

[13] Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements [J].

Karatas, S. ;

Altindal, S. ;

Turut, A. ;

Cakar, M. .

PHYSICA B-CONDENSED MATTER, 2007, 392 (1-2) :43-50

[14] Effect of series resistance on the performance of high resistivity silicon Schottky diode [J].

Keffous, A ;

Siad, M ;

Mamma, S ;

Belkacem, Y ;

Chaouch, CL ;

Menari, H ;

Dahmani, A ;

Chergui, W .

APPLIED SURFACE SCIENCE, 2003, 218 (1-4) :336-342

[15]

KOEZUKA H, 1989, SYNTHETIC MET, V28, pC753, DOI 10.1016/0379-6779(89)90600-0

[16]

Neamen D., 1992, SEMICONDUCTORS PHYS

[17] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[18]

Osvald J, 1998, SOLID STATE ELECTRON, V42, P191, DOI 10.1016/S0038-1101(97)00229-3

[19] CAPACITANCE CHARACTERIZATION OF CU2S/CDS HETEROJUNCTIONS [J].

SANTAMARIA, J ;

IBORRA, E ;

MARTIL, I ;

GONZALEZDIAZ, G ;

SANCHEZQUESADA, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) :781-785

[20]

SHARMA BL, 1984, SCHOTTKY BARRIER JUN, V31

← 1 2 3 →