Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures

被引：97

作者：

Aydogan, S. ^{[1
]}

Saglam, M. ^{[1
]}

Tueruet, A. ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 02期

关键词：

polyaniline; series resistance; Schottky contact; current voltage characteristics; organic/inorganic junction;

D O I：

10.1016/j.mee.2007.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characterization of the PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics. Especially, some characteristics have been compared with the 300 K temperature characteristics at liquid nitrogen temperature. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the current-voltage measurements. According to the C-V characteristics, the higher values of capacitance at low frequencies and high temperature have been attributed to the excess capacitance resulting from the interface states in equilibrium with the p-Si, which can follow the a.c. signal. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：278 / 283

页数：6

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