NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance

被引：6

作者：

Ayala, N. ^{[1
]}

Martin-Martinez, J. ^{[1
]}

Amat, E. ^{[1
]}

Gonzalez, M. B. ^{[2
]}

Verheyen, P. ^{[2
]}

Rodriguez, R. ^{[1
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

Simoen, E. ^{[2
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

CMOS; Reliability; Variability; NBTI; SPICE; Modelling; MOSFETS; ISSUES;

D O I：

10.1016/j.mee.2011.03.093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold voltage (V-T) and mobility (mu) shifts due to process related variability and Negative Bias Temperature Instability are experimentally characterized in pMOSFETs. A simulation technique to include the time-dependent variabilities of V-T and mu in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. The results show that mobility degradation under NBTI stresses could have to be considered for the evaluation of the circuit performance after device aging. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1384 / 1387

页数：4

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