Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

被引：2
|
作者：
Bakhadyrkhanov, MK [1 ]
Sattarov, OÉ [1 ]
Iliev, KM [1 ]
Ayupov, KS [1 ]
Umaier, T [1 ]
机构：
[1] Beruni State Tech Univ, Tashkent 700095, Uzbekistan
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 07期
关键词：
Silicon; Manganese; Boron; Optimum Condition; Magnetic Material;
D O I：
10.1134/1.1992635
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：789 / 791
页数：3
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