Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells

被引：53

作者：

Nakano, S. ^{[1
]}

Chen, X. J. ^{[1
]}

Gao, B. ^{[1
]}

Kakimoto, K. ^{[1
]}

机构：

[1] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Computer simulation; Directional solidification; Semiconducting silicon; Solar cells; UNIDIRECTIONAL-SOLIDIFICATION PROCESS; INGOT;

D O I：

10.1016/j.jcrysgro.2010.11.009

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the influence of cooling rate on dislocation density in multicrystalline silicon using the unidirectional solidification process for solar cells. The results showed that the maximum value of dislocation density is decreased and that of residual stress is increased in a fast cooling process. These phenomena are attributed to the difference in dwell time at an elevated temperature for multiplication of dislocations. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：280 / 282

页数：3

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