Silicon defect characterization by high resolution Laplace Deep Level Transient Spectroscopy

被引：0

作者：

Peaker, AR ^{[1
]}

Dobaczewski, L ^{[1
]}

Andersen, O ^{[1
]}

Rubaldo, L ^{[1
]}

Hawkins, ID ^{[1
]}

Nielsen, KB ^{[1
]}

Evans-Freeman, JH ^{[1
]}

机构：

[1] Univ Manchester, Inst Sci & Technol, Ctr Elect Mat, Manchester M60 1QD, Lancs, England

来源：

HIGH PURITY SILICON VI | 2000年 / 4218卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reviews what has been achieved by applying the new high resolution technique of Laplace Deep Level Transient Spectroscopy (LDLTS) to the study of defects in silicon materials and devices. Among the examples described are hydrogenated transition metals, implant damage, effects of the local environment on impurities in SiGe and the use of uniaxial stress with LDLTS to determine defect symmetry.

引用

页码：549 / 560

页数：4

共 22 条

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