Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays

被引：25

作者：

Lin, Chih-Lung ^{[1
]}

Wu, Chia-En ^{[2
]}

Chen, Fu-Hsing ^{[2
]}

Lai, Po-Cheng ^{[2
]}

Cheng, Mao-Hsun ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 06期

关键词：

Amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT); bidirectional operation; gate driver; shift register; TFTs; TFT-LCD APPLICATION; AMORPHOUS-SILICON TECHNOLOGY; DESIGN;

D O I：

10.1109/TED.2016.2555358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display system, bidirectional transmission function is implemented by adjusting the sequence of clock signals without extra controlling signal. The lifetime of the proposed gate driver circuit is increased by reducing the drain bias stress of the input TFTs. The measurement results indicate that the proposed gate driver circuit can remain stable for more than 812 h at 70 degrees C, demonstrating its feasibility and long-term reliability for full high-definition resolution.

引用

页码：2405 / 2411

页数：7

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