A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor

In this work, we present a core model of terminal charge and intrinsic capacitances of InAs-on-Si MOS transistors. The eigenenergy and corresponding wavefunctions are deduced by solving time independent Schro center dot dinger wave equation inside the finite potential well. A second-order nonparabolic correction to the sub-band energy, effective mass of electron, and conduction band density of states have been employed and incorporated into the core model. The developed model effectively captures the variation in gate capacitance and reproduce the staircase like capacitancevoltage characteristics. Effect of conduction band nonparabolicity on gate capacitance is studied for different band-nonparabolicity factor. The model is validated with self-consistent Schro center dot dingerPoisson solver predicted result for different drain bias and channel thicknesses. The model calculated results are in a reasonable agreement with numerical simulation data. The SPICE compatibility of our model is demonstrated through Verilog-AMS implementation of the model and SPICE simulation of two benchmark circuits.