Defects Inducing Ferromagnetism in Carbon-Doped ZnO Films

被引：23

作者：

Li, Xiao-Li ^{[1
]}

Guo, Jun-Feng ^{[1
]}

Quan, Zhi-Yong ^{[1
]}

Xu, Xiao-Hong ^{[1
]}

Gehring, Gillian A. ^{[2
]}

机构：

[1] Shanxi Normal Univ, Dept Chem & Mat Sci, Linfen, Shanxi, Peoples R China

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2010年 / 46卷 / 06期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Diluted magnetic semiconductor; donor defect; electron transfer; ferromagnetism; THIN-FILMS; ORIGIN;

D O I：

10.1109/TMAG.2010.2044480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon-doped ZnO films were prepared on c-cut sapphire substrates by conventional PLD method. All films exhibit RT ferromagnetism. However, the samples deposited at low temperature and low pressure with low C concentration show large M-s. The substitution of carbon for O in ZnO causes the electron transfer of 3d orbital of Zn ion, which results in the generation of a net spin with one half in the d-orbit of Zn, and accordingly makes ferromagnetism possible. XPS and Auger results indicate the formation of donor defects such as V-O or/and Zn-i in the film, which makes the net spin align, accordingly induces magnetic ordering of the films. Both a certain number of donor defects and the net spin of Zn ions caused by the substitution of O by C are two key factors in inducing magnetic ordering in C-doped ZnO films. Therefore, defect-induced ferromagnetism is reasonable to explain the observed magnetism in our experiment.

引用

页码：1382 / 1384

页数：3

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