First-principles analysis of photocurrent in graphene PN junctions

被引：154

作者：

Chen, Jingzhe ^{[1
]}

Hu, Yibin

Guo, Hong

机构：

[1] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 15期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1103/PhysRevB.85.155441

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a first-principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. The nonequilibrium Green's function formalism combined with density functional theory is applied to calculate the photoresponse function. The graphene PN junctions show a broadband photoresponse including the terahertz range. The dependence of the response on the angle between the light polarization vector and the PN interface is determined. Its variation against photon energy E-ph is calculated in the visible range. The essential properties of chemically doped and gate-controlled PN junctions are similar, but the former shows fingerprints of dopant distribution.

引用

页数：6

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