Simulation Analysis of Structure Design for Low Temperature Cu-Cu Direct Bonding in Heterogeneous Integration and Advanced Packaging Systems

被引：0
作者：
Pan, Yu-Ming [1 ]
Yang, Yu-Tao [1 ]
Chou, Tzu-Chieh [1 ]
Yu, Ting-Yang [1 ]
Yang, Kai-Ming [2 ]
Ko, Cheng-Ta [2 ]
Chen, Yu-Hua [2 ]
Tseng, Tzyy-Jang [2 ]
Chen, Kuan-Neng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Unimicron Technol Corp, Hsinchu, Taiwan
来源：
2018 13TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to realize Cu-Cu bonding at low temperature, Cu pillar-concave structures on silicon substrate and on silicon substrate with another polymer layer, polyimide (PI), are both investigated through simulation. Height of Cu pillar, thickness of upper and lower silicon substrate, and thickness of Cu concave are simulated in this paper. The proposed structure could have great impacts on current semiconductor packaging technology, such as improvement of joint strength, enhancement of adhesive strength between various substrates, a Cu-Cu bonding process lower than 200 degrees C with simplified manufacturing process.
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页码：111 / 114
页数：4
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