机构:
Kent State Univ, Dept Phys, Kent, OH 44242 USAKent State Univ, Dept Phys, Kent, OH 44242 USA
Lussem, Bjorn
[1
]
Keum, Chang-Min
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机构:
Kent State Univ, Dept Phys, Kent, OH 44242 USAKent State Univ, Dept Phys, Kent, OH 44242 USA
Keum, Chang-Min
[1
]
Kasemann, Daniel
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机构:
Tech Univ Dresden, Inst Angew Photophys, D-01069 Dresden, GermanyKent State Univ, Dept Phys, Kent, OH 44242 USA
Kasemann, Daniel
[2
]
Naab, Ben
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机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
Dow Chem Co USA, Dow Elect Mat, 455 Forest St, Marlborough, MA 01752 USAKent State Univ, Dept Phys, Kent, OH 44242 USA
Naab, Ben
[3
,4
]
Bao, Zhenan
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机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USAKent State Univ, Dept Phys, Kent, OH 44242 USA
Bao, Zhenan
[3
]
Leo, Karl
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机构:
Tech Univ Dresden, Inst Angew Photophys, D-01069 Dresden, GermanyKent State Univ, Dept Phys, Kent, OH 44242 USA
Leo, Karl
[2
]
机构:
[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.