Doped Organic Transistors

被引:503
作者
Lussem, Bjorn [1 ]
Keum, Chang-Min [1 ]
Kasemann, Daniel [2 ]
Naab, Ben [3 ,4 ]
Bao, Zhenan [3 ]
Leo, Karl [2 ]
机构
[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA
[2] Tech Univ Dresden, Inst Angew Photophys, D-01069 Dresden, Germany
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[4] Dow Chem Co USA, Dow Elect Mat, 455 Forest St, Marlborough, MA 01752 USA
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; N-TYPE DOPANT; LIGHT-EMITTING-DIODES; MOLYBDENUM DITHIOLENE COMPLEX; TRANSITION-METAL OXIDES; CHARGE-TRANSFER; THRESHOLD-VOLTAGE; P-TYPE;
D O I
10.1021/acs.chemrev.6b00329
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.
引用
收藏
页码:13714 / 13751
页数:38
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